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Silicon carbide devices
Silicon carbide devices










silicon carbide devices

Keywords: DC distribution Microgrids More-electric aircraft Power electronics Silicon carbide Wideband gap semiconductors. The performance analyses demonstrates that 97.5% of efficiency is achieved at 500 kHz switching frequency. To validate the project, computer simulations were performed and a 1.0 kW prototype was built in the laboratory.

silicon carbide devices

The analyzes are performed using a Boost converter designed for conversion systems in the more-electric aircraft (MEA) context, where the alternating current (AC) power systems can operate at fixed frequency (115 V/400 Hz), or at variable frequency (115 V/360-800 Hz), such as observe in Boeing 787, and the direct current (DC) power system can operate with a DC bus of 400 V and +/-270 V are normally used. In this sense, this work analyzes the efficiency and specificities of silicon carbide (SiC) technologies and their cascode topology (SiC-Cascode), operating at high switching frequencies. Wideband gap (WBG) semiconductors have developed rapidly in recent years, enabling greater efficiency and power density in the design of power electronics converters for several areas of application.












Silicon carbide devices